Ionizing Radiation Effects In Metal-Oxide Semiconductor Devices And Circuits
by Tso Ping Ma and PAUL V. Dressendorfer
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The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
- Circuits & Components
- Publication Date:
- John Wiley & Sons Inc
- Country of origin:
- annotated ed
- 608 pages, Ill.
- Dimensions (mm):
- 241 x 166 x 34