Ionizing Radiation Effects In Mos Devices And Circuits
by Tso Ping Ma and PAUL V. Dressendorfer
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This is the first comprehensive overview describing the effects of ionizing radiation on MOS devices, and how to design, fabricate, and test integrated circuits intended for use in a radiation environment. It also addresses process-induced radiation effects in the fabrication of high-density circuits, and reviews the history of radiation-hard technology, providing background information for those new to the field. The book includes a comprehensive review of the literature, and an annotated listing of research activities in radiation-hardness research. The volume will be of benefit to semi conductor process development engineers, device and circuit development engineers, device physicists, reliability assurance engineers, project managers and stress analysts.
- Publication Date:
- John Wiley & Sons Inc (us)
- Country of origin:
- annotated ed
- 608 pages, Ill.
- Dimensions (mm):
- 241 x 166 x 34