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Ionizing Radiation Effects In Mos Devices And Circuits

by Tso Ping Ma and PAUL V. Dressendorfer

Hardback

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Synopsis

This is the first comprehensive overview describing the effects of ionizing radiation on MOS devices, and how to design, fabricate, and test integrated circuits intended for use in a radiation environment. It also addresses process-induced radiation effects in the fabrication of high-density circuits, and reviews the history of radiation-hard technology, providing background information for those new to the field. The book includes a comprehensive review of the literature, and an annotated listing of research activities in radiation-hardness research. The volume will be of benefit to semi conductor process development engineers, device and circuit development engineers, device physicists, reliability assurance engineers, project managers and stress analysts.

Product details

ISBN:
9780471848936
Category:
General
Format:
Hardback
Publication Date:
1989-04-04
Publisher:
John Wiley & Sons Inc (us)
Illustrations:
Ill.
Country of origin:
USA
Edition:
annotated ed
Pages:
608
Pagination:
608 pages, Ill.
Dimensions (mm):
241 x 166 x 34
Weight:
962g

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